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| Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 1N6690-1N6693 and 1N6690US-1N6693US 20 AMP 600-1200 Volts 75 nsec ULTRA FAST RECTIFIER Features: * * * * * * * * * Replaces DO-4 and DO-5 Ultra Fast Recovery PIV to 1200 Volts Low Reverse Leakage Hermetically Sealed Void-Free Construction3/ Monolithic Single Chip Construction High Surge Rating Low Thermal Resistance Available in Surface Mount Versions (-US Suffix) and in Button Tab Mounting (See Data Sheet RU0129). * TX, TXV, and S-Level Screening Available2/ DESIGNER'S DATA SHEET Part Number / Ordering Information 1/ 1N66 __ __ __ L L Screening 2/ Package = None TX = TX Level TXV = TXV Level S = S Level ____ = Axial SMS = Surface Mount Square Tab L Voltage 90 = 600 V 91 = 800 V 92 = 1000 V 93 = 1200 V Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage 1N6690 & 1N6690US 1N6691 & 1N6691US 1N6692 & 1N6692US 1N6693 & 1N6693US Symbol VRRM VRWM VR Io Value 600 800 1000 1200 Units Volts Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 100C) Repetitive Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between Pulses, TA = 25C) Operating & Storage Temperature Maximum Thermal Resistance Junction to Leads, L = 3/8 " Junction to End Tab 20 Amps IFSM Top & Tstg RJL RJE 375 -65 to +175 3.0 2.5 Amps C C/W Notes: 1/ For Ordering Information, Price, Operating Curves, and Availability - Contact Factory. 2/ Screening Based on MIL-PRF-19500. Specifics Available on Request. 3/ PIND Testing not Required on Void Free Devices per MIL-PRF-19500. Axial Leaded SMS NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0143D DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 1N6690-1N6693 and 1N6690US-1N6693US Symbol TA = 25C TA = -55C TA = 25C TA = 100C VF1 VF2 Electrical Characteristics Instantaneous Forward Voltage Drop (IF = 20 Adc, 300-500 s pulse) Reverse Leakage Current (Rated VR, 300 s pulse minimum) Junction Capacitance (VR = 10 Vdc, TA = 25C, f = 1MHz) Reverse Recovery Time (IF = 500 mA, IR = 1A, IRR = 250mA, TA = 25C) Case Outline: Axial Max 1.9 2.2 10 2.0 250 75 Units Vdc A mA pF nsec IR1 IR2 CJ trr Surface Mount Square Tab (SMS) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0143D DOC |
Price & Availability of 1N6690
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